SMG2329P

Elektronische Bauelemente SMG2329P -2.5 A, -30 V, RDS(ON) 0.112  P-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The miniature surface mount MOSFETs utilize a high cell density trench process To provide low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. FEATURES  Low RDS(on) provides higher efficiency and extends battery life.  Low thermal impedance copper leadframe SC-59 saves board space.  Fast switching speed.  High performance trench technology. K F SC-59 A L 3 Top View 1 E 2 CB 1 D G H 3 2 J PRODUCT SUMMARY PRODUCT SUMMARY VDS(V) -30 RDS(on) ( 0.112@VGS= -10V 0.172@VGS= -4.5V ID(A) -2.5 -2.0 REF. A B C D E F Millimeter Min. 2.70 2.25 1.30 Max. 3.10 3.00 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 PACKAGE INFORMATION Package MPQ SC-59 3K LeaderSize 7’ inch ABSOLUTE MAXIMUM RATINGS AND THERMAL DATA(TA = 25°C unless otherwise specified) PARAMETER SYMBOL Drain-Source Voltage Gate-Source Voltage Continuous Drain Current A TA=25°C TA=70°C Pulsed Drain Current B Continuous Source Current (Diode Conduction) A Power Dissipation A TA=25°C TA=70°C Operating Junction and Storage Temperature Range VD...