Elektronische Bauelemente
SMG2370N
1.8 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Prod...
Elektronische Bauelemente
SMG2370N
1.8 A, 100 V, RDS(ON) 280 m N-Channel Enhancement Mode Mos.FET
RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free
DESCRIPTION
These miniature surface mount
MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are DC-DC converters and power management in portable and battery-powered products such as computers, printer , PCMCIA cards, cellular and cordless telephones.
FEATURES
Low RDS(on) provides higher efficiency and extends battery life.
Low thermal impedance copper leadframe SC-59 saves board Space.
Fast switching speed. High performance trench technology.
PACKAGE INFORMATION
Package
MPQ
SC-59
3K
LeaderSize 7’ inch
SC-59
A
L
3
Top View
CB
12
KE
1
D F GH
3 2
J
REF.
A B C D E F
Millimeter
Min.
2.70 2.25 1.30
1.00
Max.
3.10 3.00 1.70
1.40
1.70 2.30
0.35 0.50
REF.
G H J K L
Millimeter
Min. Max. 0.10 REF. 0.40 REF.
0.10 0.20 0.45 0.55
0.85 1.15
1 3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Drain-Source
Voltage Gate-Source
Voltage Continuous Drain Current 1 Pulsed Drain Current 2 Continuous Source Current (Diode Conduction) 1 Power Dissipation 1 Operating Junction and Storage Temperature Range
ID @ TA=25°C PD @ TA=25°C
Symbol
VDS VGS ID IDM IS PD Tj, Tstg
Thermal Resistance Ratings
Parameter
Symbol
Maximum Junction to Ambient 1
t ≦ 10 sec Steady State
Note...