SMG2392N

SMG2392N Elektronische Bauelemente 0.6A, 150V, RDS(ON) 2.6Ω N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION These miniature surface mount MOSFETs utilize a High Cell Density trench process to provide Low RDS(on) and to ensure minimal power loss and heat dissipation. Typical applications are A L 3 SC-59 3 Top View C B 1 2 2 FEATURES Low RDS(on) provides higher efficiency and extends battery life. Low thermal impedance copper lead frame SC-59 saves board space. Fast switching speed. High performance trench technology. 1 K E D F REF. A B C D E F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 REF. G H J K L Application DC-DC converters and power management in portable and battery-powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones. 1 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7’ inch 2 3 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 2 1 1 Symbol VDS VGS TA=25°C TA=70°C IDM IS PD Tj, Tstg ID Ratings 150 ±20 0.6 0.4 10 1.7 1.3 0.8 -55 ~ 150 Unit V V A A A W W °C Continuous Source Current (Diode Conduction) Power Dissipation 1 TA=25°C TA=70°C Operating Junction and Storage Temperature Range Thermal Resistance Ratings Maxi...