SMG3018K

SMG3018K Elektronische Bauelemente 640mA, 30V,RDS(ON)8£[ N-Channel Enhancement Mode Power Mos.FET Description The SMG3018K utilized advanced processing techniques to achieve the lowest possible onresistance, extremely efficient and costeffectiveness device. The SMG3018K is universally used for all commercial-industrial applications. A L 3 Top View SC-59 Dim A B 1 Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 S 2 B C D G H J K D G Features * RoHS Compliant * Simple Drive Requirement * Small Package Outline H Drain Gate Source C J K L S All Dimension in mm Marking : 3018E D G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Continuous Drain Current Pulsed Drain Current 1,2 3 3 Symbol VDS VGS ID@TA=25 C ID@TA=70 C IDM PD@TA=25 C o o o Ratings 30 ± 20 640 500 950 1.38 0.01 Unit V V mA mA mA W W / oC o Total Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg -55~+150 C Thermal Data Parameter Thermal Resistance Junction-ambient 3 Symbol Max. Rthj-a Ratings 90 Unit o C /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Page 1 of 4 Free Datasheet http://www.datasheet4u.com/ SMG3018K Elektronische Bauelemente 640mA, 30V,RDS(ON)8£[ N-Channel Enhancement Mode Power Mos.FET Electrical Characteristics( Tj=25 C Parameter Drain-Source ...