DatasheetsPDF.com

SMG3402 Datasheet

Part Number SMG3402
Manufacturers SeCoS Halbleitertechnologie
Logo SeCoS Halbleitertechnologie
Description N-Channel MOSFET
Datasheet SMG3402 DatasheetSMG3402 Datasheet (PDF)

SMG3402 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-59 A L 3 PACKAGE INFORMATION Weight: 0.07800g K 1 3 Top View 2 C B 1 2 E D Drain MARKING CODE 1 Gate 3 F REF. A B C D E F .

  SMG3402   SMG3402






Part Number SMG3407
Manufacturers SeCoS
Logo SeCoS
Description P-Channel MOSFET
Datasheet SMG3402 DatasheetSMG3407 Datasheet (PDF)

SMG3407 -4.1A, -30V,RDS(ON) 52m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG 3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G D G C J K Features * Lower G.

  SMG3402   SMG3402







Part Number SMG3404
Manufacturers SeCoS
Logo SeCoS
Description N-Channel MOSFET
Datasheet SMG3402 DatasheetSMG3404 Datasheet (PDF)

Elektronische Bauelemente SMG3404 N-Ch Enhancement Mode Power MOSFET 3.8 A, 30 V, RDS(ON), 60 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES z The SMG3404 uses advanced trench technology to provide excellent on-resistance, very low gate charge and operation with gate voltages as low as 2.5V. z The SMG3404 is universally used for all commercial-industrial applications and suited for use as a load switch or in PWM applications. z Lower Gate.

  SMG3402   SMG3402







Part Number SMG3403A
Manufacturers SeCoS
Logo SeCoS
Description P-Channel MOSFET
Datasheet SMG3402 DatasheetSMG3403A Datasheet (PDF)

SMG3403A Elektronische Bauelemente -3.2A, -30V,RDS(ON) 70m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description S The SMG3403A provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG3403A is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.

  SMG3402   SMG3402







Part Number SMG3403
Manufacturers SeCoS
Logo SeCoS
Description P-Channel MOSFET
Datasheet SMG3402 DatasheetSMG3403 Datasheet (PDF)

SMG3403 -3.7A, -30V,RDS(ON) 75m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG3403 provide the designer with the best S combination of fast switching, low on-resistance and cost-effectiveness. The SMG3403 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10.

  SMG3402   SMG3402







N-Channel MOSFET

SMG3402 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-59 A L 3 PACKAGE INFORMATION Weight: 0.07800g K 1 3 Top View 2 C B 1 2 E D Drain MARKING CODE 1 Gate 3 F REF. A B C D E F G Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 H REF. G H J K L J Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 3402 1 2 Source ABSOLUTE MAXIMUM RATINGS Parameter Drain-Source Voltage Gate-Source Voltage 3 Continuous Drain Current 3 Continuous Drain Current 1,2 Pulsed Drain Current Total Power Dissipation Symbol Ratings 30 ±20 4.6 3.7 16 1.38 -55 ~ +150 0.01 Unit V V A A A W ℃ W/℃ VDS VGS ID @TA=25℃ ID @TA=70℃ IDM PD @TA=25℃ Operating Junction and Storage Temperature Range TJ, TSTG Linear Derating Factor THERMAL DATA Parameter 3 Thermal Resistance Junction-ambient Max Symbol RθJ-AMB Value 90 Unit ℃/W 01-December-2008 Rev. A Page 1 of 4 SMG3402 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ ELECTRICAL CHARACTERISTICS (Tj = 25°C unless otherwise specified) Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drai.


2014-08-09 : MASK32    MASK33    MASK34    MASK35    MASK36    MASK38    MASK310    NCP4545    NCV4949A    SBESD5301N   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)