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SMG3407 Datasheet

Part Number SMG3407
Manufacturers SeCoS
Logo SeCoS
Description P-Channel MOSFET
Datasheet SMG3407 DatasheetSMG3407 Datasheet (PDF)

SMG3407 -4.1A, -30V,RDS(ON) 52m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG 3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G D G C J K Features * Lower G.

  SMG3407   SMG3407






Part Number SMG3404
Manufacturers SeCoS
Logo SeCoS
Description N-Channel MOSFET
Datasheet SMG3407 DatasheetSMG3404 Datasheet (PDF)

Elektronische Bauelemente SMG3404 N-Ch Enhancement Mode Power MOSFET 3.8 A, 30 V, RDS(ON), 60 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES z The SMG3404 uses advanced trench technology to provide excellent on-resistance, very low gate charge and operation with gate voltages as low as 2.5V. z The SMG3404 is universally used for all commercial-industrial applications and suited for use as a load switch or in PWM applications. z Lower Gate.

  SMG3407   SMG3407







Part Number SMG3403A
Manufacturers SeCoS
Logo SeCoS
Description P-Channel MOSFET
Datasheet SMG3407 DatasheetSMG3403A Datasheet (PDF)

SMG3403A Elektronische Bauelemente -3.2A, -30V,RDS(ON) 70m£[ P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description S The SMG3403A provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. The SMG3403A is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.

  SMG3407   SMG3407







Part Number SMG3403
Manufacturers SeCoS
Logo SeCoS
Description P-Channel MOSFET
Datasheet SMG3407 DatasheetSMG3403 Datasheet (PDF)

SMG3403 -3.7A, -30V,RDS(ON) 75m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG3403 provide the designer with the best S combination of fast switching, low on-resistance and cost-effectiveness. The SMG3403 is universally preferred for all commercial industrial surface mount application and suited for low voltage applications such as DC/DC converters. 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10.

  SMG3407   SMG3407







Part Number SMG3402
Manufacturers SeCoS Halbleitertechnologie
Logo SeCoS Halbleitertechnologie
Description N-Channel MOSFET
Datasheet SMG3407 DatasheetSMG3402 Datasheet (PDF)

SMG3402 Elektronische Bauelemente N-Ch Enhancement Mode Power MOSFET 4.6 A, 30 V, RDS(ON), 30 mΩ RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTIONS & FEATURES The SMG3402 uses advanced trench technology to provide excellent on-resistance. The device is suitable for use as a load switch or in PWM applications. Lower On-resistance SC-59 A L 3 PACKAGE INFORMATION Weight: 0.07800g K 1 3 Top View 2 C B 1 2 E D Drain MARKING CODE 1 Gate 3 F REF. A B C D E F .

  SMG3407   SMG3407







P-Channel MOSFET

SMG3407 -4.1A, -30V,RDS(ON) 52m£[ Elektronische Bauelemente P-Channel Enhancement Mode Power Mos.FET RoHS Compliant Product A Description The SMG 3407 uses advanced trench technology to provide excellent on-resistance with low gate change. The device is suitable for use as a load switch or in PWM applications. S 2 L SC-59 Dim Min 2.70 1.40 1.00 0.35 1.70 0.00 0.10 0.20 0.85 2.40 Max 3.10 1.60 1.30 0.50 2.10 0.10 0.26 0.60 1.15 2.80 3 Top View B 1 A B C D G D G C J K Features * Lower Gate Charge * Small Package Outline * RoHS Compliant Gate Source H J K H Drain L S D All Dimension in mm G S Absolute Maximum Ratings Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current3 Continuous Drain Current3 1 Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Symbol VDS VGS ID @TA=25 ID @TA=70 IDM PD @TA=25 Tj, Tstg Symbol Rthj-a Ratings -30 ±20 -4.1 -3.5 -20 1.38 0.01 -55 ~ +150 Ratings 90 Unit V V A A A W W/ Thermal Data Parameter 3 Thermal Resistance Junction-ambient Max. Unit /W http://www.SeCoSGmbH.com/ Any changing of specification will not be informed individual 01-Jun-2002 Rev. A Free Datasheet http://www.datasheet4u.com/ Page 1 of 4 SMG3407 -4.1A, -30V,RDS(ON) 52m£[ Elektronische Bauelemente Electrical Characteristics (Tj = 25 Parameter Drain-Source Breakdown Voltage Gate Threshold Voltage Forward Transconductance Gate-Source Leakage Current Drain-Source Leakage Current(Tj.


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