SMG5402

SMG5402 Elektronische Bauelemente 4A , 30V , RDS(ON) 55 mΩ N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG5406 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG5406 is universally used for all commercial-industrial applications. A L 3 SC-59 3 Top View 1 2 C B 1 2 K E D FEATURES Simple Drive Requirement Small Package Outline F G H J REF. MARKING 5402 PACKAGE INFORMATION Package SC-59 MPQ 3K Leader Size 7 inch A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current , [email protected] Pulsed Drain Current Power Dissipation Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg 1,2 3 Symbol VDS VGS TA=25° C TA=70° C ID IDM TA=25° C PD Ratings 30 ±12 4 Unit V V A 3 16 1.38 0.01 -55~150 A W W/° C ° C Thermal Resistance Rating Maximum Junction to Ambient 3 RθJA 90 ° C/W http://www.SeCoSGmbH.com/ Any changes of specification will not be informed individually. 26-Oct-2012 Rev. A Page 1 of 4 SMG5402 Elektronische Bauelemente 4A , 30V , RDS(ON) 55 mΩ N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACT...