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SMG5406

SeCoS

N-Channel MOSFET

Elektronische Bauelemente SMG5406 3.6A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product...


SeCoS

SMG5406

File Download Download SMG5406 Datasheet


Description
Elektronische Bauelemente SMG5406 3.6A , 30V , RDS(ON) 65 m N-Channel Enhancement Mode MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen and lead-free DESCRIPTION The SMG5406 utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost-effectiveness device. The SMG5406 is universally used for all commercial-industrial applications. FEATURES  Simple Drive Requirement  Small Package Outline MARKING 5406 PACKAGE INFORMATION Package MPQ SC-59 3K Leader Size 7 inch SC-59 A L 3 Top View CB 12 KE 1 D F GH 3 2 J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.25 3.00 1.30 1.70 1.00 1.40 1.70 2.30 0.35 0.50 REF. G H J K L Millimeter Min. Max. 0.10 REF. 0.40 REF. 0.10 0.20 0.45 0.55 0.85 1.15 TOP VIEW ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS Continuous Drain Current 2 , VGS@10V Pulsed Drain Current 1 TA=25°C TA=70°C ID IDM Power Dissipation TA=25°C PD Linear Derating Factor Operating Junction and Storage Temperature Range Tj, Tstg Thermal Resistance Rating Maximum Junction to Ambient 2 RθJA Notes: 1. Pulse width limited by Max. junction temperature. 2. Surface mounted on 1 in2 copper pad of FR4 board; 270℃/W when mounted on Min. copper pad. Ratings 30 ±20 3.6 2.8 10 1.38 0.01 -55~150 90 Unit V V A A W W / °C °C °C / W http://www.SeCoSGmbH.com/ 09-Nov-2012 Rev. B Any changes of speci...




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