SMK1060FJ
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High Voltage : BVDSS=600V(Min.)
Low...
SMK1060FJ
Advanced N-Ch Power
MOSFET
SWITCHING REGULATOR APPLICATIONS
Features
High
Voltage : BVDSS=600V(Min.)
Low Crss : Crss=18pF(Typ.) Low gate charge : Qg=35nC(Typ.) Low RDS(on) : RDS(on)=0.75Ω(Max.)
Ordering Information
Type No.
Marking
Package Code
SMK1060FJ
SMK1060
TO-220F-3L (J Forming)
PIN Connection
G DS
G TO-220F-3L
Marking Diagram
AAUUKK SMGΔKYYM1M0D6DD0D SDB20D45
Column 1 : Manufacturer
Column 2 : Production Information e.g.) GYMDD -. G : Factory management code -. YMDD : Date Code (year, month, date)
Column 3 : Device Code
D S
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source
voltage
VDSS
Gate-source
voltage
VGSS
Drain current (DC) * Drain current (Pulsed) *
ID
TC=25C TC=100C
IDM
Power dissipation Avalanche current (Single) Single pulsed avalanche energy Avalanche current (Repetitive) Repetitive avalanche energy
② ② ① ①
PD IAS EAS IAR EAR
Junction temperature
TJ
Storage temperature range
Tstg
* Limited by maximum junction temperature
Rating
600 30 10 5.8 38 40 10 480 10 11.6 150 -55~150
Characteristic
Thermal resistance
Junction-case Junction-ambient
Symbol
Rth(J-C) Rth(J-A)
Typ.
-
Max.
3.1 62.5
Unit
V V A A A W A mJ A mJ
C
Unit
C/W
KSD-T0O069-000
1
SMK1060FJ
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakdown
voltage
BVDSS ID=250uA, VGS=0V
Gate threshold
voltage
VGS(th)
ID=250uA, VDS=VG...