SMK1080FD
Advanced N-Ch Power MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-Source breakdown voltage: BVDSS=...
SMK1080FD
Advanced N-Ch Power
MOSFET
SWITCHING REGULATOR APPLICATION
Features
Drain-Source breakdown
voltage: BVDSS=800V Low gate charge: Qg=58nC (Typ.) Low drain-source On resistance: RDS(on)=1.1Ω (Max.) RoHS compliant device
100% avalanche tested
Ordering Information
Part Number
Marking
Package
SMK1080FD
SMK1080
TO-220F-3L
GDS
TO-220F-3L
Marking Information
AAUUKK SM△ΔKY1YM0MD8DD0D SDB20D45
Column 1: Manufacturer Column 2: Production Information
e.g.) △YMDD
-. △: Factory Management Code -. YMDD: Date Code (Year, Month, Date) Column 3: Device Code
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source
voltage Gate-source
voltage
Drain current (DC) *
Drain current (Pulsed) * Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range
VDSS
VGSS
ID
Tc=25C Tc=100C
IDM
EAS
IAR
EAR
PD
TJ
Tstg
* Limited only maximum junction temperature
Rating 800 30 10 6.32 40 800 10 4.8 48 150
-55~150
Unit V V A A A mJ A mJ W C C
Rev. date: 14-NOV-12
KSD-T0O113-000
www.auk.co.kr
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Thermal Characteristics
Characteristic
Thermal resistance, junction to case Thermal resistance, junction to ambient
Symbol Rth(j-c) Rth(j-a)
SMK1080FD
Rating Max. 2.6 Max. 62.5
Unit C/W
Electrical Characteristics (TC=25C unless otherwise noted)
Characteristic
Symbol
Test Condition
Drain-source breakd...