SML010FBDH06

SILICON CARBIDE POWER SCHOTTKY RECTIFIER DIODE BRIDGE SML010FBDH06 600V, 10A Full Bridge Rectifier Configuration High Temperature Operation Tj = 200°C Effective Zero Reverse and Forward Recovery High Speed Low Loss Switching High Frequency Operation High-Reliability Screening Options Available ABSOLUTE MAXIMUM RATINGS (Per Die, Tc = 25°C unless otherwise stated) VRRM VRSM VDC IF(AVG) IFSM TJ Tstg Repetitive Peak Reverse Breakdown Voltage Surge Peak Reverse Voltage DC Blocking Voltage Average Forward Current Non Repetitive Peak Forward Surge Current, tp = 10µs Junction Temperature Range Storage Temperature Range 600V 600V 600V 10A 45A -55 to +200°C -55 to +225°C THERMAL PROPERTIES (Per Die) Symbols RθJC Parameters Thermal Resistance, Junction To Case Max. 2.0 Units °C/W ELECTRICAL CHARACTERISTICS (Per Die, Tc = 25°C unless otherwise stated) Symbols VF IR (1) Parameters Forward Voltage Test Conditions IF = 10A Tc = 175°C VR = VRRM Tc = 175°C Min. Typ. 1.8 2.0 10 Max. 2.2 2.7 100 1000 Units V Reverse Current µA DYNAMIC CHARACTERISTICS QC Total Capacitative Charge IF = 10A di/dt = 500A/µs VR = 600V TJ = 25°C 32 nC Notes (1) Pulse Width ≤ 300us, δ ≤ 2% Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discover...