Chip LEDs with Reflector 1208<3.0 2.0 t=1.3mm> High Brightness Type
SML013WB∗∗∗ Series
Emitting Color Material Package Size(mm) White InGaN on SiC
www.DataSheet4U.com
3020(1208) 3.0×2.0(t=1.3)
Part No.
note) "-" will be taken out for emitting color B/E series.
SML013WBDW
Absolute Maximum Ratings (Ta=25°C)
Part No.
Dimensions (Unit:mm)
3.0 2.3 1.3 +0.2 -0.1 0.3 0.5
Power Forward Peak Reverse Operating Storage Emitting dissipation current forward voltage temperature temperature current colo.
Chip LEDs
Chip LEDs with Reflector 1208<3.0 2.0 t=1.3mm> High Brightness Type
SML013WB∗∗∗ Series
Emitting Color Material Package Size(mm) White InGaN on SiC
www.DataSheet4U.com
3020(1208) 3.0×2.0(t=1.3)
Part No.
note) "-" will be taken out for emitting color B/E series.
SML013WBDW
Absolute Maximum Ratings (Ta=25°C)
Part No.
Dimensions (Unit:mm)
3.0 2.3 1.3 +0.2 -0.1 0.3 0.5
Power Forward Peak Reverse Operating Storage Emitting dissipation current forward voltage temperature temperature current color PD IF VR Topr Tstg IFP∗ (mW) (mA) (V) (°C) (°C) (mA)
White
78 20 100 5 -30 to +85 -40 to +100
2.0 1.6
SML013WBDW
:Duty 1/10, 1kHz
Cathode mark
Electrical Optical Characteristics (Ta=25°C)
Forward voltage VF
Typ. (V) SML013WBDW Phosphor included
1:Pulse width : 30ms Tolerance:±0.2
Part No.
Resin
Reverse current IR
Max. (µA) 100 VR (V) 5
Chromaticity coordinates
x 0.30 y 0.30 IF∗ 1 (mA) 20
Brightness IV
Min.
( mcd)
2-R0.3 1.7 Terminal
IF∗ 1 (mA) 20
Typ. IF∗ 1 (mcd) (mA) 900 20
3.2
360
1.6
Chromaticity Diagram
0.4
Directivity (Typ.)
X-Y
Angular Displacement (deg)
X' - Y' Valid for both directions 0°
30° 30°
C
CIE y
B
0.3
60°
60°
A
90° 100 90° 100
50
0
50
RELATIVE LUMINOUS INTENSITY (%)
0.2 0.2 0.3 0.4
CIE x
Chromaticity Coordinates (Ta=25˚C, IF=20mA) A x 0.283 0.299 0.280 0.260 y 0.244 0.269 0.312 0.272 x 0.280 0.330 0.330 0.299 B y 0.312 0.370 0.307 0.269 x 0.330 0.354 0.363 0.330 C y 0.307 0.339 0.398 0.370
Measurement tolerance:±0.01
Recommended Pad Lay.