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SML100A9 Datasheet

Part Number SML100A9
Manufacturers Seme LAB
Logo Seme LAB
Description N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
Datasheet SML100A9 DatasheetSML100A9 Datasheet (PDF)

SML100A9 TO–3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.47 (0.058) 1.60 (0.063) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) VDSS 1000V 9A ID(cont) RDS(on) 1.100Ω • Faster Switching • Lower Leakage • TO–3 Hermetic Package 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) Pin 1 – Gate 16.64 (0.655) 17.15 (0.

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N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS

SML100A9 TO–3 Package Outline. Dimensions in mm (inches) 25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 6.35 (0.25) 9.15 (0.36) N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS 1.47 (0.058) 1.60 (0.063) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) VDSS 1000V 9A ID(cont) RDS(on) 1.100Ω • Faster Switching • Lower Leakage • TO–3 Hermetic Package 38.61 (1.52) 39.12 (1.54) 29.9 (1.177) 30.4 (1.197) Pin 1 – Gate 16.64 (0.655) 17.15 (0.675) Pin 2 – Source Case – Drain D 22.23 (0.875) max. G S StarMOS is a new generation of high voltage N–Channel enhancement mode power MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout. ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source Voltage Gate – Source Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2 1000 9 36 ±30 ±40 200 1.6 –55 to 150 300 9 30 1210 V A A V W W/°C °C A mJ 1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting .


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