SML100H11
TO–258 Package Outline.
Dimensions in mm (inches)
17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 ...
SML100H11
TO–258 Package Outline.
Dimensions in mm (inches)
17.65 (0.695) 17.39 (0.685) 6.86 (0.270) 6.09 (0.240) 1.14 (0.707) 0.88 (0.035)
17.96 (0.707) 17.70 (0.697)
13.84 (0.545) 13.58 (0.535)
1 2 3
4.19 (0.165) 3.94 (0.155) Dia.
21.21 (0.835) 20.70 (0.815)
N–CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
VDSS 1000V 11A ID(cont) RDS(on) 0.880Ω
3.56 (0.140) BSC
19.05 (0.750) 12.70 (0.500)
5.08 (0.200) BSC 1.65 (0.065) 1.39 (0.055) Typ.
Pin 1 – Drain
Pin 2 – Source
Pin 3 – Gate
Faster Switching Lower Leakage TO–258 Hermetic Package
D
G S
StarMOS is a new generation of high
voltage N–Channel enhancement mode power
MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source
Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source
Voltage Gate – Source
Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
1000 11 44 ±30 ±40 250 2.0 –55 to 150 300 11 30 1300
V A A V W W/°C °C A mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2)...