SML20W65
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
VDSS...
SML20W65
TO–267 Package Outline.
Dimensions in mm (inches)
N–CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
VDSS 200V 65A ID(cont) RDS(on) 0.026Ω
Faster Switching Lower Leakage TO–267 Hermetic Package
D
StarMOS is a new generation of high
voltage N–Channel enhancement mode power
MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
G S
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source
Voltage Continuous Drain Current 3 Pulsed Drain Current 1 3 Gate – Source
Voltage Gate – Source
Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current 1 3 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy 2
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starting TJ = 25°C, L = 1.18mH, RG = 25Ω, Peak IL = 65A 3) Maximum current limited by package.
200 65 260 ±30 ±40 400 3.2 –55 to 150 300 65 50 2500
V A A V W W/°C °C A mJ
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail:
[email protected]
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SML20W65
STATIC ELECTRICAL RATINGS (Tcase = 25°C unless otherwise stated)
BVDSS IDSS IGSS VGS(TH) ID(ON) RDS(ON)...