SML25SCM650N2B

SILICON CARBIDE N-CHANNEL POWER MOSFET SML25SCM650N2B 650V SiC MOSFET In A Hermetic SMD1 (TO-276AB) Package Designed For High Temperature / Power Efficiency Applications ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise stated) VDS Drain - Source Voltage VGS Gate - Source Voltage ID Continuous Drain Current (1) Tc = 25°C IDM Pulsed Drain Current (2) PD Total Power Dissipation at TJ = 25°C Derate Above 25°C TJ Maximum Junction Temperature Tstg Storage Temperature Range THERMAL PROPERTIES Symbols Parameters RθJC Thermal Resistance, Junction To Case Notes (1) Repetitive Rating: Pulse width limited by maximum junction temperature (2) Pulse Width ≤10 us, δ ≤ 1% (3) Pulse Width ≤ 380us, δ ≤ 2% (4) Indicative by design, not a production test (5) Pulse Width ≤ 780us, δ ≤ 2% 650V -6 to +22V 25A 60A 90W 0.45W/°C 225°C -55 to +225°C Max. 2.2 Units °C/W Semelab Limited reserves the right to change test conditions, parameter limits and package dimensions without notice. Information furnished by Semelab is believed to be both accurate and reliable at the time of going to press. However Semelab assumes no responsibility for any errors or omissions discovered in its use. Semelab encourages customers to verify that datasheets are current before placing orders. Semelab Limited Coventry Road, Lutterworth, Leicestershire, LE17 4JB Telephone: +44 (0) 1455 556565 Fax: +44 (0) 1455 552612 Email: [email protected] Website: http://www.semelab-tt.com Document Number: 10498 Issue: 2 Pa...