SML30A33
TO–3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.0...
SML30A33
TO–3 Package Outline.
Dimensions in mm (inches)
25.15 (0.99) 26.67 (1.05) 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135)
6.35 (0.25) 9.15 (0.36)
N–CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
1.47 (0.058) 1.60 (0.063)
1
2
3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50)
VDSS 300V 33A ID(cont) RDS(on) 0.090Ω
Faster Switching Lower Leakage TO–3 Hermetic Package
38.61 (1.52) 39.12 (1.54)
29.9 (1.177) 30.4 (1.197)
Pin 1 – Gate
16.64 (0.655) 17.15 (0.675)
Pin 2 – Source
Case – Drain
D
22.23 (0.875) max.
G S
StarMOS is a new generation of high
voltage N–Channel enhancement mode power
MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source
Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source
Voltage Gate – Source
Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
300 33 132 ±30 ±40 235 1.88 –55 to 150 300 33 30 1300
V A A V W W/°C °C A mJ
1) Repetitive Rating: Pulse Width limited by maximum junction temperature. 2) Starti...