SML30L76
TO–264AA Package Outline.
Dimensions in mm (inches)
1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 ...
SML30L76
TO–264AA Package Outline.
Dimensions in mm (inches)
1.80 (0.071) 2.01 (0.079) 4.60 (0.181) 5.21 (0.205) 19.51 (0.768) 26.49 (0.807) 3.10 (0.122) 3.48 (0.137) 5.79 (0.228) 6.20 (0.244)
25.48 (1.003) 26.49 (1.043)
N–CHANNEL ENHANCEMENT MODE HIGH
VOLTAGE POWER
MOSFETS
1
2
3
2.29 (0.090) 2.69 (0.106) 2.79 (0.110) 3.18 (0.125)
VDSS 300V 76A ID(cont) RDS(on) 0.040W
Faster Switching Lower Leakage 100% Avalanche Tested Popular TO–264 Package
0.48 (0.019) 0.84 (0.033) 2.59 (0.102) 3.00 (0.118)
19.81 (0.780) 21.39 (0.842)
Pin 1 – Gate
Pin 2 – Drain
2.29 (0.090) 2.69 (0.106) 0.76 (0.030) 1.30 (0.051)
5.45 (0.215) BSC 2 plcs.
Pin 3 – Source
D
G S
StarMOS is a new generation of high
voltage N–Channel enhancement mode power
MOSFETs. This new technology minimises the JFET effect, increases packing density and reduces the on-resistance. StarMOS also achieves faster switching speeds through optimised gate layout.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated)
VDSS ID IDM VGS VGSM PD TJ , TSTG TL IAR EAR EAS Drain – Source
Voltage Continuous Drain Current Pulsed Drain Current 1 Gate – Source
Voltage Gate – Source
Voltage Transient Total Power Dissipation @ Tcase = 25°C Derate Linearly Operating and Storage Junction Temperature Range Lead Temperature : 0.063” from Case for 10 Sec. Avalanche Current1 (Repetitive and Non-Repetitive) Repetitive Avalanche Energy 1 Single Pulse Avalanche Energy
2
300 76 304 ±30 ±40 520 4.16 –55 to 150 300 76 50 25...