SMN630LD

SMN630LD Logic Level N-Ch Power MOSFET 200V LOGIC N-Channel MOSFET Features  Drain-Source breakdown voltage: BVDSS=200V (Min.)  Low gate charge: Qg=12nC (Typ.)  Low drain-source On-Resistance: RDS(on)=0.34Ω (Typ.)  100% avalanche tested  RoHS compliant device Ordering Information Part Number Marking Package SMN630LD SMN630L TO-252 D G S TO-252 Marking Information SMN 630L YWW Column 1, 2: Device Code Column 3: Production Information e.g.) YWW -. YWW: Date Code (year, week) Absolute maximum ratings (TC=25C unless otherwise noted) Characteristic Symbol Drain-source voltage Gate-source voltage Drain current (DC) * Drain current (Pulsed) * Avalanche current (Note 2) Single pulsed avalanche energy (Note 2) Repetitive avalanche current (Note 1) Repetitive avalanche energy (Note 1) Power dissipation Junction temperature Storage temperature range VDSS VGSS ID Tc=25C Tc=100C IDM IAS EAS IAR EAR PD TJ Tstg * Limited only maximum junction ...