SMOS21N50, SMOS26N50
Power MOSFETs
Dimensions TO-247AD
Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26...
SMOS21N50, SMOS26N50
Power
MOSFETs
Dimensions TO-247AD
Dim. A B Millimeter Min. Max. 19.81 20.32 20.80 21.46 15.75 16.26 3.55 3.65 4.32 5.4 1.65 1.0 10.8 4.7 0.4 1.5 5.49 6.2 2.13 4.5 1.4 11.0 5.3 0.8 2.49 Inches Min. Max. 0.780 0.819 0.610 0.140 0.170 0.212 0.065 0.040 0.426 0.185 0.016 0.087 0.800 0.845 0.640 0.144 0.216 0.244 0.084 0.177 0.055 0.433 0.209 0.031 0.102
(TAB)
S D G
C D E F G H
G=Gate, D=Drain, S=Source,TAB=Drain
J K L M N
Symbol VDSS VDGR VGS VGSM ID25 TJ=25oC to 150oC
Test Conditions
Maximum Ratings 500 500 ±20 ±30 21N50 26N50 21 26 84 104 21 26 30
Unit V
TJ=25oC to 150oC; RGS=1M Continuous Transient TC=25oC TC=25oC; pulse width limited by TJM TC=25oC TC=25oC IS TJ IDM; di/dt
o
V
A
IDM
21N50 26N50
A
IAR
21N50 26N50
A mJ V/ns
EAR dv/dt
100A/us; VDD
VDSS'
5
150 C; RG=2 300
-55...+150 150 -55...+150
o
PD TJ TJM Tstg TL Md Weight
TC=25oC
W
C
1.6mm(0.062 in.) from case for 10s Mounting torque
300 1.13/10 6
o
C
Nm/Ib.in. g
SMOS21N50, SMOS26N50
Power
MOSFETs
(TJ=25oC, unless otherwise specified) Symbol VDSS VGS(th) IGSS IDSS Test Conditions VGS=0V; ID=250uA VDS=VGS; ID=4mA VGS=±20VDC; VDS=0 VDS=0.8VDSS; TJ=25oC VGS=0V; TJ=125oC Characteristic Values min. typ. max. 500 2 4 ±100 200 1 Unit V V nA uA mA
(TJ=25oC, unless otherwise specified) Symbol RDS(on) Test Conditions VGS=10V; ID=0.5ID25 21N50 26N50 Pulse test, t 300us, duty cycle 2% VDS=10V; ID=0.5ID25; pulse test VGS=0V; VDS=25V; f=1MHz Characteristic Values min. typ. max. 0.25 0...
