RA36 / SMRA36
Cascadable Amplifier 100 to 2000 MHz
Rev. V3
Features
• HIGH GAIN-THREE STAGES: 24.0 dB (TYP.) • LOW VSWR: 1.4:1 (TYP.) • MEDIUM OUTPUT LEVEL: +13.0 dBm (TYP.) • WIDE BANDWIDTH: 50-2100 MHz (TYP.)
Product Image
Description
The RA36 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 3 stage bipolar transistor feedback amplifier design displays impressive performance over a broadband freque.
Cascadable Amplifier
RA36 / SMRA36
Cascadable Amplifier 100 to 2000 MHz
Rev. V3
Features
• HIGH GAIN-THREE STAGES: 24.0 dB (TYP.) • LOW VSWR: 1.4:1 (TYP.) • MEDIUM OUTPUT LEVEL: +13.0 dBm (TYP.) • WIDE BANDWIDTH: 50-2100 MHz (TYP.)
Product Image
Description
The RA36 RF amplifier is a discrete hybrid design, which uses thin film manufacturing processes for consistent performance and high reliability. This 3 stage bipolar transistor feedback amplifier design displays impressive performance over a broadband frequency range. An active DC biasing network insures temperature-stable performance. Both TO-8B and Surface Mount packages are hermetically sealed, and MIL-STD-883 environmental screening is available.
Ordering Information
Part Number
RA36 SMRA36 CRA36 **
Package
TO-8B Surface Mount SMA Connectorized
** The connectorized version is not RoHs compliant.
Electrical Specifications: Z0 = 50Ω, VCC = +15 VDC
Absolute Maximum Ratings
Parameter
Frequency Small Signal Gain (min)
Gain Flatness (max) Reverse Isolation Noise Figure (max) Power Output
@ 1 dB comp. (min) IP3
Units
MHz dB dB dB dB dBm dBm
Typical 25ºC
50-2100 24.0 ±0.5 40 5.5 13.0 +22
Guaranteed 0º to 50ºC -54º to +85ºC*
0.1-2.0 GHz 0.1-2.0 GHz 23.0 22.0 ±0.9 ±1.0
6.5 7.0 12.0 11.5
Parameter
Absolute Maximum
Storage Temperature -62ºC to +125ºC
Case Temperature
125ºC
DC Voltage
+17 V
Continuous Input Power
+10 dBm
Short Term Input power (1 minute max.)
50 mW
Peak Power (3 µsec max.)
0.5 W
“S” Series Burn-In Temperatur.