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SMS2310

SeCoS

N-Channel MOSFET

Elektronische Bauelemente SMS2310 3A, 60V, RDS(ON) 105m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix ...


SeCoS

SMS2310

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Description
Elektronische Bauelemente SMS2310 3A, 60V, RDS(ON) 105m N-Channel Enhancement MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES  Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed  Low Input/Output Leakage APPLICATION  Battery Switch  DC/DC Converter MARKING S10 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7’ inch SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.04 2.10 2.80 1.20 1.60 0.89 1.40 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. - 0.18 0.40 0.60 0.08 0.20 0.6 REF. 0.85 1.15 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Top View Parameter Symbol Rating Drain-Source Voltage Continuous Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 Power Dissipation Thermal Resistance, Junction to Ambient 2 Junction and Storage Temperature Range VDSS VGSS ID IDM PD RθJA TJ, TSTG 60 ±20 3 10 0.35 357 150, -55~150 Unit V V A A W °C/W °C http://www.SeCoSGmbH.com/ 18-Dec-2014 Rev. B Any changes of specification will not be informed individually. Page 1 of 3 Elektronische Bauelemente SMS2310 3A, 60V, RDS(ON) 105m N-Channel Enhancement MOSFET ELECTRICAL CHARACTERISTICS (TA=25°C unless otherwise specified) Parameter Symbol Min. Typ. Max. Unit Test Conditions STATIC CHARACTERISTICS Drain-Source Breakdown Voltage Gate-Body Leakage Current Zero Gate Voltage Drain Current Gat...




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