DatasheetsPDF.com

SMS2333 Datasheet

Part Number SMS2333
Manufacturers SeCoS
Logo SeCoS
Description P-Channel MOSFET
Datasheet SMS2333 DatasheetSMS2333 Datasheet (PDF)

Elektronische Bauelemente SMS2333 -6A , -12V , RDS(ON) 28 mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS2333 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. F.

  SMS2333   SMS2333






P-Channel MOSFET

Elektronische Bauelemente SMS2333 -6A , -12V , RDS(ON) 28 mΩ P-Channel Enhancement Mode Power MOSFET RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free DESCRIPTION The SMS2333 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. FEATURES Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic MARKING S33 SOT-23 A L 3 Top View CB 12 KE 1 3 2 D F GH J REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50 REF. G H J K L Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20 0.6 REF. 0.95 BSC. PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch 1 3 2 ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified) Parameter Symbol Rating Drain-Source Voltage Gate-Source Voltage Continuous Drain Current 1 Pulsed Drain Current (t=300µs) Maximum Power Dissipation 2 Maximum Power Dissipation 1 Thermal Resistance Junction-Ambient 2 Thermal Resistance Junction-Ambient 1 VDS VGS ID IDM PD RθJA -12 ±8 -6 -20 0.35 1.1 357 113 Operating Junction & Storage Temperature TJ, TSTG 150, -55~150 Note: 1. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side. 2. Device mounted on no heat sink. Unit V V A A .


2016-04-02 : R5F35L23JFE    R5F35L33JFF    R5F35L26JFE    R5F35L36JFF    R5F35L2EJFE    R5F35L3EJFF    R5F35L30KFF    R5F35L23KFE    R5F35L33KFF    R5F35L26KFE   


@ 2014 :: Datasheetspdf.com ::
Semiconductors datasheet search & download site (Privacy Policy & Contact)