Elektronische Bauelemente
SMS2333
-6A , -12V , RDS(ON) 28 mΩ P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2333 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
F.
P-Channel MOSFET
Elektronische Bauelemente
SMS2333
-6A , -12V , RDS(ON) 28 mΩ P-Channel Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free
DESCRIPTION
The SMS2333 provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SOT-23 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
FEATURES
Lower Gate Charge Simple Drive Requirement Fast Switching Characteristic
MARKING
S33
SOT-23
A
L
3
Top View
CB
12
KE
1
3 2
D F GH J
REF.
A B C D E F
Millimeter Min. Max. 2.70 3.10 2.10 2.65 1.20 1.40 0.89 1.17 1.78 2.04 0.30 0.50
REF.
G H J K L
Millimeter Min. Max. 0.09 0.18 0.35 0.65 0.08 0.20
0.6 REF. 0.95 BSC.
PACKAGE INFORMATION
Package
MPQ
SOT-23
3K
Leader Size 7 inch
1 3
2
ABSOLUTE MAXIMUM RATINGS (TA=25°C unless otherwise specified)
Parameter
Symbol
Rating
Drain-Source Voltage
Gate-Source Voltage Continuous Drain Current 1
Pulsed Drain Current (t=300µs) Maximum Power Dissipation 2 Maximum Power Dissipation 1 Thermal Resistance Junction-Ambient 2 Thermal Resistance Junction-Ambient 1
VDS VGS ID IDM
PD
RθJA
-12 ±8 -6 -20 0.35 1.1 357 113
Operating Junction & Storage Temperature
TJ, TSTG
150, -55~150
Note: 1. Device mounted on FR-4 substrate board, with minimum recommended pad layout, single side. 2. Device mounted on no heat sink.
Unit V V A A
.