SMD/SMU30N03-30L
N-Channel Enhancement-Mode Transistors, Logic Level
Product Summary
VDS (V) 30
rDS(on) (W) 0.030
TO...
SMD/SMU30N03-30L
N-Channel Enhancement-Mode Transistors, Logic Level
Product Summary
VDS (V) 30
rDS(on) (W) 0.030
TO-252
IDa (A) 30
TO-251
D
G
Drain Connected to Tab
GD S
Top View
GD S
S
Order Number: SMD30N03-30L
Top View
Order Number: SMU30N03-30L
N-Channel
MOSFET
Absolute Maximum Ratings (TA = 25_C Unless Otherwise Noted)
Parameter
Symbol
Limit
Unit
Drain-Source
Voltage Gate-Source
Voltage
Continuous Drain Current (TJ = 150_C)b
Pulsed Drain Current Continuous Source Current (Diode Conduction) Avalanche Current Repetitive Avalanche Energy (Duty Cycle v 1%)
Maximum Power Dissipation
Operating Junction and Storage Temperature Range
TA = 25_C TA = 100_C
L = 0.1 mH TC = 25_C TA = 25_C
VDS VGS
ID
IDM IS IAR EAR
PD
TJ, Tstg
30 "20 6.0 3.8
30 6 30 45 50 2b –55 to 150
V
A
mJ W _C
Thermal Resistance Ratings
Parameter
Symbol
Typical
Maximum Unit
Maximum Junction-to-Ambientb
RthJA
60
Maximum Junction-to-Case
RthJC
2.5 _C/W
Case-to-Sink
RthCS
1.0
Notes:
...
