PD-97178
RADIATION HARDENED LOGIC LEVEL POWER MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level R...
PD-97178
RADIATION HARDENED LOGIC LEVEL POWER
MOSFET THRU-HOLE (MO-036AB)
Product Summary
Part Number Radiation Level RDS(on) IRHLG77110 100K Rads (Si) 0.22Ω IRHLG73110 300K Rads (Si) 0.22Ω ID 1.8A 1.8A
2N7612M1 IRHLG77110 100V, Quad N-CHANNEL
TECHNOLOGY
MO-036AB
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in space and other radiation environments. The threshold
voltage remains within acceptable operating limits over the full operating temperature and post radiation. This is achieved while maintaining single event gate rupture and single event burnout immunity. These devices are used in applications such as current boost low signal source in PWM,
voltage comparator and operational
amplifiers.
Features:
n n n n n n n n
5V
CMOS and TTL Compatible Fast Switching Single Event Effect (SEE) Hardened Low Total Gate Charge Simple Drive Requirements Ease of Paralleling Hermetically Sealed Light Weight
Absolute Maximum Ratings
Parameter
ID @ VGS = 4.5V, TC=25°C ID @ VGS = 4.5V, TC=100°C IDM PD @ TC = 25°C VGS EAS IAR EAR dv/dt TJ T STG Continuous Drain Current Continuous Drain Current Pulsed Drain Current À Max. Power Dissipation Linear Derating Factor Gate-to-Source
Voltage Single Pulse Avalanche Energy Á Avalanche Current À Repetitive Avalanche Energy À Peak Diode Recovery dv/dt  Operating Junction Storage Temperature Range Lead Temperature Weight For footnotes refer to the las...