Driver. SN64BCT2827C Datasheet

SN64BCT2827C Datasheet PDF


Part

SN64BCT2827C

Description

10-Bit BUS/MOS Memory Driver

Manufacture

etcTI

Page 5 Pages
Datasheet
Download SN64BCT2827C Datasheet


SN64BCT2827C Datasheet
State-of-the-Art BiCMOS Design
Significantly Reduces ICCZ
ESD Protection Exceeds 2000 V Per
MIL-STD-883C, Method 3015; Exceeds
200 V Using Machine Model (C = 200 pF,
R = 0)
Output Ports Have Equivalent 33-Series
Resistors, So No External Resistors Are
Required
High-Impedance State During Power Up
and Power Down
3-State Outputs Drive Bus Lines or
Buffer-Memory Address Registers
Flow-Through Architecture Optimizes PCB
Layout
Package Options Include Plastic
Small-Outline (DW) Packages and Standard
Plastic 300-mil DIPs (NT)
SN64BCT2827C
10ĆBIT BUS/MOS MEMORY DRIVER
WITH 3ĆSTATE OUTPUTS
SCBS415 − APRIL 1987 − REVISED NOVEMBER 1993
DW OR NT PACKAGE
(TOP VIEW)
OE1
A1
A2
A3
A4
A5
A6
A7
A8
A9
A10
GND
1
2
3
4
5
6
7
8
9
10
11
12
24 VCC
23 Y1
22 Y2
21 Y3
20 Y4
19 Y5
18 Y6
17 Y7
16 Y8
15 Y9
14 Y10
13 OE2
description
This 10-bit buffer and bus/MOS driver provides a high-performance bus interface for wide data paths or buses
carrying parity.
The 3-state control gate is a 2-input AND gate with active-low inputs so that if either output-enable (OE1 or OE2)
input is high, all ten outputs are in the high-impedance state. The outputs are also in the high-impedance state
during power-up and power-down conditions. The outputs remain in the high-impedance state while the device
is powered down.
The outputs, which are designed to source or sink up to 12 mA, include 33-series resistors to reduce overshoot
and undershoot.
The SN64BCT2827C is characterized for operation from − 40°C to 85°C and 0°C to 70°C.
FUNCTION TABLE
INPUTS
OE1 OE2 A
OUTPUT
Y
LLL
L
L LH
H
HXX
Z
XHX
Z
PRODUCTION DATA information is current as of publication date.
Products conform to specifications per the terms of Texas Instruments
standard warranty. Production processing does not necessarily include
testing of all parameters.
Copyright 1993, Texas Instruments Incorporated
POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443
1

SN64BCT2827C Datasheet
SN64BCT2827C
10ĆBIT BUS/MOS MEMORY DRIVER
WITH 3ĆSTATE OUTPUTS
SCBS415 − APRIL 1987 − REVISED NOVEMBER 1993
logic symbol
OE1
OE2
1
13
&
EN
logic diagram (positive logic)
OE1
OE2
1
13
2 23
2
23 A1
Y1
A1 1 Y1
3 22
A2 Y2
4 21
A3 Y3
5 20
A4
6
Y4
19
To Nine Other Channels
A5 Y5
7 18
A6 Y6
8 17
A7 Y7
9 16
A8 Y8
10 15
A9 Y9
11 14
A10 Y10
This symbol is in accordance with ANSI/IEEE Std 91-1984
and IEC Publication 617-12.
schematic of each output
VCC
GND
Output
2 POST OFFICE BOX 655303 DALLAS, TEXAS 75265
POST OFFICE BOX 1443 HOUSTON, TEXAS 77251−1443


Features Datasheet pdf • State-of-the-Art BiCMOS Design Signi ficantly Reduces ICCZ • ESD Protectio n Exceeds 2000 V Per MIL-STD-883C, Meth od 3015; Exceeds 200 V Using Machine Mo del (C = 200 pF, R = 0) • Output Port s Have Equivalent 33-Ω Series Resisto rs, So No External Resistors Are Requir ed • High-Impedance State During Powe r Up and Power Down • 3-State Outputs Drive Bus Lines or Buffer-Memory Addre ss Registers • Flow-Through Architect ure Optimizes PCB Layout • Package Op tions Include Plastic Small-Outline (DW ) Packages and Standard Plastic 300-mil DIPs (NT) SN64BCT2827C 10ĆBIT BUS/MO S MEMORY DRIVER WITH 3ĆSTATE OUTPUTS S CBS415 − APRIL 1987 − REVISED NOVEM BER 1993 DW OR NT PACKAGE (TOP VIEW) O E1 A1 A2 A3 A4 A5 A6 A7 A8 A9 A10 GND 1 2 3 4 5 6 7 8 9 10 11 12 24 VCC 23 Y 1 22 Y2 21 Y3 20 Y4 19 Y5 18 Y6 17 Y7 1 6 Y8 15 Y9 14 Y10 13 OE2 description T his 10-bit buffer and bus/MOS driver pr ovides a high-performance bus interface for wide data paths or buses carrying parity. The 3-state control gate is a 2-input .
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