BiCMOS Design Significantly Reduces
Standby Current
3-State True Outputs Drive Bus Lines or
Buffer Memory-Address Registers
High-Impedance State During Power Up
and Power Down
P-N-P Inputs Reduce DC Loading Data Flow-Through Pinout (All Inputs on
Opposite Side From Outputs)
ESD Protection Exceeds 2000 V
Per MIL-STD-883C, Method 3015
Package Opt...
