SN 7000
SIPMOS ® Small-Signal Transistor • N channel • Enhancement mode • Logic Level
• VGS(th) = 0.8...2.0V
Pin 1 D ...
SN 7000
SIPMOS ® Small-Signal Transistor N channel Enhancement mode Logic Level
VGS(th) = 0.8...2.0V
Pin 1 D Type SN 7000 Type SN 7000 SN 7000
Pin 2 G Marking SN 7000
Pin 3 S
VDS
60 V
ID
0.25 A
RDS(on)
5Ω
Package TO-92
Ordering Code Q62702-S638 Q62702-S637
Tape and Reel Information E6288 E6296
Maximum Ratings Parameter Drain source
voltage Drain-gate
voltage Symbol Values 60 60 Unit V
VDS V
DGR
RGS = 20 kΩ
Gate source
voltage Gate-source peak
voltage,aperiodic Continuous drain current
VGS Vgs ID
± 14 ± 20 A 0.25
TA = 25 °C
DC drain current, pulsed
IDpuls
1
TA = 25 °C
Power dissipation
Ptot
0.63
W
TA = 25 °C
Semiconductor Group
1
12/05/1997
SN 7000
Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air 1) DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 Symbol Values -55 ... + 150 -55 ... + 150 ≤ 200 E 55 / 150 / 56 K/W Unit °C
Tj Tstg RthJA
Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown
voltage Values typ. max. Unit
V(BR)DSS
60 1.4 0.1 1 2 3 2
V
VGS = 0 V, ID = 0.25 mA, Tj = 25 °C
Gate threshold
voltage
VGS(th)
0.8
VGS=VDS, ID = 1 mA
Zero gate
voltage drain current
IDSS
1 5
µA
VDS = 60 V, VGS = 0 V, Tj = 25 °C VDS = 60 V, VGS = 0 V, Tj = 125 °C
Gate-source leakage current
IGSS
10
nA Ω 5 5.3
VGS = 20 V, VDS = 0 V
Drain-Source on-state resistance
RDS(on)
VGS...