SNN4010D
N-Ch Trench MOSFET
Power Switching Application
Features
Drain-source breakdown voltage: BVDSS=100V Low ga...
SNN4010D
N-Ch Trench
MOSFET
Power Switching Application
Features
Drain-source breakdown
voltage: BVDSS=100V Low gate charge device
Low drain-source On resistance: RDS(on)=25mΩ (Typ.) Advanced trench process technology
High avalanche energy, 100% test
Ordering Information
Part Number
Marking
Package
SNN4010D
SNN4010
TO-252
D
G S
TO-252
Marking Information
SNN 4010 YWW
Column 1, 2: Device Code Column 3: Production Information e.g.) YWW
-. YWW: Date Code (year, week)
Absolute maximum ratings (TC=25C unless otherwise noted)
Characteristic
Symbol
Drain-source
voltage Gate-source
voltage
VDSS VGSS
Drain current (DC) *
Drain current (Pulsed) * Single pulsed avalanche energy (Note 1) Single avalanche current Power dissipation Operating junction temperature Storage temperature range
Tc=25C ID
Tc=100C IDM EAS IAS PD TJ Tstg
* Limited only maximum junction temperature
Rev. date: 14-MAR-13
KSD-T6O041-001
Rating 100 20 45 35 180 163 25.5 8...