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SP0610T Datasheet

Part Number SP0610T
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor
Datasheet SP0610T DatasheetSP0610T Datasheet (PDF)

SP 0610T SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -1.0..-2.0V Pin 1 G Pin 2 S Pin 3 D Type SP 0610T Type SP 0610T VDS -60 V ID -0.13 A RDS(on) 10 Ω Package SOT-23 Marking sSF Ordering Code Q67000-S088 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -60 -60 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Continuous drain current VGS ID ± 20 A -0.13 TA = 36 °C DC dr.

  SP0610T   SP0610T






Part Number SP0610L
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor
Datasheet SP0610T DatasheetSP0610L Datasheet (PDF)

SIPMOS® Small-Signal Transistor q VDS − 60 V q ID − 0.18 A q RDS(on) 10 Ω q P channel q Enhancement mode SP 0610L 2 3 1 Type Ordering Code Tape and Reel Information bulk Pin Configuration Marking 1 D 2 G 3 S Package SP 0610 L Q67000-S065 Maximum Ratings Parameter Drain-source voltage SP0610L TO-92 Symbol Values − 60 − 60 ± 20 − 0.18 − 0.72 0.63 − 55 … + 150 ≤ 200 – E 55/150/56 Unit V VDS VDGR VGS ID ID puls Ptot Tj, Tstg RthJA RthJSR TA = 25 ˚C TA = 25 ˚C Drain-gate voltage, RGS = 2.

  SP0610T   SP0610T







Part Number SP0610
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor
Datasheet SP0610T DatasheetSP0610 Datasheet (PDF)

SIPMOS® Small-Signal Transistor q VDS − 60 V q ID − 0.18 A q RDS(on) 10 Ω q P channel q Enhancement mode SP 0610L 2 3 1 Type Ordering Code Tape and Reel Information bulk Pin Configuration Marking 1 D 2 G 3 S Package SP 0610 L Q67000-S065 Maximum Ratings Parameter Drain-source voltage SP0610L TO-92 Symbol Values − 60 − 60 ± 20 − 0.18 − 0.72 0.63 − 55 … + 150 ≤ 200 – E 55/150/56 Unit V VDS VDGR VGS ID ID puls Ptot Tj, Tstg RthJA RthJSR TA = 25 ˚C TA = 25 ˚C Drain-gate voltage, RGS = 2.

  SP0610T   SP0610T







Part Number SP0610
Manufacturers Siemens Semiconductor Group
Logo Siemens Semiconductor Group
Description SIPMOS Small-Signal Transistor
Datasheet SP0610T DatasheetSP0610 Datasheet (PDF)

SIPMOS® Small-Signal Transistor q VDS − 60 V q ID − 0.18 A q RDS(on) 10 Ω q P channel q Enhancement mode SP 0610L 2 3 1 Type Ordering Code Tape and Reel Information bulk Pin Configuration Marking 1 D 2 G 3 S Package SP 0610 L Q67000-S065 Maximum Ratings Parameter Drain-source voltage SP0610L TO-92 Symbol Values − 60 − 60 ± 20 − 0.18 − 0.72 0.63 − 55 … + 150 ≤ 200 – E 55/150/56 Unit V VDS VDGR VGS ID ID puls Ptot Tj, Tstg RthJA RthJSR TA = 25 ˚C TA = 25 ˚C Drain-gate voltage, RGS = 2.

  SP0610T   SP0610T







SIPMOS Small-Signal Transistor

SP 0610T SIPMOS ® Small-Signal Transistor • P channel • Enhancement mode • Logic Level • VGS(th) = -1.0..-2.0V Pin 1 G Pin 2 S Pin 3 D Type SP 0610T Type SP 0610T VDS -60 V ID -0.13 A RDS(on) 10 Ω Package SOT-23 Marking sSF Ordering Code Q67000-S088 Tape and Reel Information E6327 Maximum Ratings Parameter Drain source voltage Drain-gate voltage Symbol Values -60 -60 Unit V VDS V DGR RGS = 20 kΩ Gate source voltage Continuous drain current VGS ID ± 20 A -0.13 TA = 36 °C DC drain current, pulsed IDpuls -0.52 TA = 25 °C Power dissipation Ptot 0.36 W TA = 25 °C Semiconductor Group 1 Sep-13-1996 SP 0610T Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1 1) For package mounted on aluminium 15 mm x 16.7 mm x 0.7 mm Symbol Values -55 ... + 150 -55 ... + 150 ≤ 350 ≤ 285 E 55 / 150 / 56 Unit °C K/W Tj Tstg RthJA Therminal resistance, chip-substrate- reverse side 1)RthJSR Electrical Characteristics, at Tj = 25°C, unless otherwise specified Parameter Symbol min. Static Characteristics Drain- source breakdown voltage Values typ. max. Unit V(BR)DSS -60 -1.5 -0.1 -2 -1 7 -2 V VGS = 0 V, ID = -0.25 mA, Tj = 25 °C Gate threshold voltage VGS(th) -1 VGS=VDS, ID = -1 mA Zero gate voltage drain current IDSS -1 -60 µA VDS = -60 V, VGS = 0 V, Tj = 25 °C VDS = -60 V, VGS = 0 V, Tj = 125 °C Gate-source leakage current IGS.


2005-05-28 : MBL82C43    CD1379CP    MTA1163    MTA1164    MTA1N60E    27128    272.001    272.002    272.003    272.004   


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