SP4401

Green Product SP4401 Ver 1.0 S a mHop Microelectronics C orp. P-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS -30V ID -8A R DS(ON) (m Ω) Max 12.5 @ VGS=-10V 18 @ VGS=-4.5V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D D D P in 1 5 6 7 8 4 3 2 1 G S S S D TSON 3.3 x 3.3 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed c d ac Limit -30 ±20 TA=25°C TA=70°C -8 -6.4 -46 30 TA=25°C TA=70°C 1.67 1.07 -55 to 150 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient 75 °C/W Details are subject to change without notice. Jan,29,2014 1 www.samhop.com.tw SP4401 Ver 1.0 ELECTRICAL CHARACTERISTICS ( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=-250uA VDS=-24V , VGS=0V Min Typ Max Units OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Body Leakage Current IGSS ON CHARACTERISTICS Gate Threshold Voltage VGS(th) RDS(ON) gFS Drain-Source On-State Resistance Forward Transconductance b -30 -1 ±10 V uA uA VGS= ±20V , VDS=0V VDS=VGS , ID=-250uA VGS=-10V , ID=-4A VGS=-4.5V , ID=-3A VDS=-10V , ID=-4A -1.0 -1.6 10 13...