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SP823C Transistor Datasheet PDFN-Channel Logic Level Enhancement Mode Field Effect Transistor N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Part Number | SP823C |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | SP823CGreen
Product
Sa mHop Microelectr onics C orp. N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1. 0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 80V 80A 5. 5 @ VGS=10V FE ATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Sufa ce Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc=25 °C unless otherwise noted) Symbol Par ameter VDS Drain-Source Voltage VGS G ate-Source Voltage ID Drain Current-C ontinuous c TC=25°C TC=70°C IDM -Pu lsed a c EAS Single Pulse Avalanche En ergy d PD Maximum Power Dissipation TC=25°C TC=70°C T . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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| Part Number | SP823C |
|---|---|
| Description | N-Channel Logic Level Enhancement Mode Field Effect Transistor |
| Feature | SP823CGreen
Product
Sa mHop Microelectr onics C orp. N-Channel Logic Level Enha ncement Mode Field Effect Transistor V er 1. 0 PRODUCT SUMMARY VDSS ID RDS(O N) (mΩ) Max 80V 80A 5. 5 @ VGS=10V FE ATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Sufa ce Mount Package. DFN 5x6 PIN1 87 65 12 34 ABSOLUTE MAXIMUM RATINGS (Tc=25 °C unless otherwise noted) Symbol Par ameter VDS Drain-Source Voltage VGS G ate-Source Voltage ID Drain Current-C ontinuous c TC=25°C TC=70°C IDM -Pu lsed a c EAS Single Pulse Avalanche En ergy d PD Maximum Power Dissipation TC=25°C TC=70°C T . |
| Manufacture | SamHop Microelectronics |
| Datasheet |
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