SPA04N80C3

CoolMOSTM Power Transistor Features New revolutionary high voltage technology Extreme dv/dt rated High peak current capability Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Ultra low gate charge Ultra low effective capacitances Fully isolated package (2500 VAC; 1 minute) CoolMOSTM 800V designed for: Industrial application with high DC bulk voltage Switching Application ( i.e. active clamp forward ) Product Summary V DS R DS(on)max @ Tj = 25°C Q g,typ SPA04N80C3 800 V 1.3 Ω 23 nC Type SPA04N80C3 Package PG-TO220-3 Marking 04N80C3 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current2) ID Pulsed drain current3) I D,pulse Avalanche energy, single pulse Avalanche energy, repetitive t 3),4) AR Avalanche current, repetitive t 3),4) AR MOSFET dv /dt ruggedness E AS E AR I AR dv /dt Gate source voltage V GS T C=25 °C T C...