SPA07N60C3

SPP07N60C3 SPI07N60C3, SPA07N60C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax 650 V RDS(on) 0.6 Ω ID 7.3 A Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 Extreme dv/dt rated 2 High peak current capability Improved transconductance 1 23 P-TO220-3-31 P-TO220-3-1 23 1 PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) Type SPP07N60C3 SPI07N60C3 SPA07N60C3 Package PG-TO220-3 PG-TO262 PG-TO220FP Ordering Code Q67040-S4400 Q67040-S4424 SP000216303 Marking 07N60C3 07N60C3 07N60C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.3A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) Symbol ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 7.3 4.6 21.9 230 7.31) 4.61) 21.9 230 0.5 0.5 7.3 7.3 ±20 ±20 ±30 ±30 83 32 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 3.2 Rev. 3.3 Page 1 Page 1 2009-11-27 2018-02-13 SPP07N60C3 SPI07N60C3, SPA07N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 7.3 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Therm...