SPP08N50C3, SPI08N50C3 SPA08N50C3
Cool MOS™ Power Transistor
Feature • New revolutionary high voltage technology • Ultr...
SPP08N50C3, SPI08N50C3 SPA08N50C3
Cool MOS™ Power Transistor
Feature New revolutionary high
voltage technology Ultra low gate charge
VDS @ Tjmax RDS(on) ID
560 0.6 7.6
Periodic avalanche rated
PG-TO220FP PG-TO262
PG-TO220
Extreme dv/dt rated
Ultra low effective capacitances Improved transconductance
P-TO220-3-31
23 1
PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
V Ω A
Type SPP08N50C3 SPI08N50C3 SPA08N50C3
Package PG-TO220 PG-TO262 PG-TO220FP
Ordering Code Q67040-S4567 Q67040-S4568 SP000216306
Marking 08N50C3 08N50C3 08N50C3
Maximum Ratings Parameter
Symbol
Continuous drain current
TC = 25 °C TC = 100 °C
Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse
ID=5.5A, VDD=50V
Avalanche energy, repetitive tAR limited by Tjmax2)
ID=7.6A, VDD=50V
Avalanche current, repetitive tAR limited by Tjmax Gate source
voltage
Gate source
voltage AC (f >1Hz)
Power dissipation, TC = 25°C Operating and storage t...