SPA08N50C3

SPP08N50C3, SPI08N50C3 SPA08N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.6 7.6 Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 Extreme dv/dt rated Ultra low effective capacitances Improved transconductance P-TO220-3-31 23 1 PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) V Ω A Type SPP08N50C3 SPI08N50C3 SPA08N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4567 Q67040-S4568 SP000216306 Marking 08N50C3 08N50C3 08N50C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=7.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage t...