SPA11N60C2

Final data SPP11N60C2, SPB11N60C2 SPA11N60C2 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances P-TO220-3-31 Product Summary VDS @ Tjmax 650 R DS(on) ID P-TO263-3-2 V Ω A 0.38 11 P-TO220-3-1 1 P-TO220-3-31 2 3 Type SPP11N60C2 SPB11N60C2 SPA11N60C2 Package P-TO220-3-1 P-TO263-3-2 Ordering Code Q67040-S4295 Q67040-S4298 Marking 11N60C2 11N60C2 11N60C2 P-TO220-3-31 Q67040-S4332 Maximum Ratings Parameter Symbol ID Value SPP_B SPA Unit Continuous drain current TC = 25 °C TC = 100 °C A 11 7 111) 71) 22 340 0.6 11 6 ±20 ±30 Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID =5.5A, VDD =50V ID puls EAS EAR IAR 22 340 0.6 11 6 ±20 ±30 A mJ Avalanche energy, repetitive tAR limited by Tjmax 2) ID =11A, VDD =50V Avalanche current, repetitive tAR limited by Tjmax Reverse diode dv/dt IS = 11 A, VDS < VDD , di/dt=100A/µs, Tjmax =150°C A V/ns V W dv/dt VGS VGS Ptot Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C 125 33 Operating and storage temperature Page 1 Tj , Tstg -55...+150 °C 2002-08-12 Final data Thermal Characteristics Parameter Characteristics SPP11N60C2, SPB11N60C2 SPA11N60C2 Symbol min. Values typ. max. Unit Thermal resistance, junction - case Thremal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistanc...