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SPA15N60C3 Datasheet

Part Number SPA15N60C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Cool MOS Power Transistor
Datasheet SPA15N60C3 DatasheetSPA15N60C3 Datasheet (PDF)

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.28 Ω 15 A PG-TO220 Type SPP15N60C3 SPI15N60C3 SPA15N60C3 Package PG-TO220 PG-TO262 PG-TO220FP Orderi.

  SPA15N60C3   SPA15N60C3






Part Number SPA15N60C3
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet SPA15N60C3 DatasheetSPA15N60C3 Datasheet (PDF)

isc N-Channel MOSFET Transistor SPA15N60C3 ·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.28Ω@10V ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·High fast switching Power Supply ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage 600 VGS Gate-Source Voltage ±30 ID Drain Current-Continuous 15 IDM Drain Current-Single Pulsed 45 PD Total Dissipation.

  SPA15N60C3   SPA15N60C3







Cool MOS Power Transistor

SPP15N60C3, SPI15N60C3 SPA15N60C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID • Periodic avalanche rated PG-TO220FP PG-TO262 • Extreme dv/dt rated • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) 650 V 0.28 Ω 15 A PG-TO220 Type SPP15N60C3 SPI15N60C3 SPA15N60C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4600 Q67040-S4601 SP000216325 Marking 15N60C3 15N60C3 15N60C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=7.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=15A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage static Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPP_I SPA 15 151) 9.4 9.41) 45 45 460 460 Unit A A mJ 0.8 0.8 15 15 ±20 ±20 ±30 ±30 156 34 -55...+150 15 A V W °C V/ns Rev. 3.2 page 1 2009-12-22 SPP15N60C3, SPI15N60C3 SPA15N60C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 480 V, ID = 15 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junctio.


2005-06-07 : DI815C    FT2232L    PCI9052    XL93LC46    F2Dxxx    NE74114    TSC333    CS8954    SSI78A263A    B4207   


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