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SPA16N50C3 Datasheet

Part Number SPA16N50C3
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Cool MOS Power Transistor
Datasheet SPA16N50C3 DatasheetSPA16N50C3 Datasheet (PDF)

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-1 123 Type SPP16N50C3 SPI16N50C3 SPA16N50C3 Package PG-TO220 PG-T.

  SPA16N50C3   SPA16N50C3






Part Number SPA16N50C3
Manufacturers INCHANGE
Logo INCHANGE
Description N-Channel MOSFET
Datasheet SPA16N50C3 DatasheetSPA16N50C3 Datasheet (PDF)

Isc N-Channel MOSFET Transistor INCHANGE Semiconductor SPA16N50C3 ·FEATURES ·Drain-source on-resistance: RDS(on) ≤ 250mΩ@10V ·Reduced switching and conduction losses ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VDSS Drain-Source Voltage 500 V VGSS Gate-Source Voltage ±20 V ID Drain Current-Continuous @Tc=25℃ (VGS at 1.

  SPA16N50C3   SPA16N50C3







Cool MOS Power Transistor

SPP16N50C3 SPI16N50C3, SPA16N50C3 Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax RDS(on) ID 560 0.28 16 V Ω A • Periodic avalanche rated PG-TO220FP PG-TO262 PG-TO220 • Extreme dv/dt rated 2 • Ultra low effective capacitances • Improved transconductance P-TO220-3-31 3 12 • PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute) P-TO220-3-1 123 Type SPP16N50C3 SPI16N50C3 SPA16N50C3 Package PG-TO220 PG-TO262 PG-TO220FP Ordering Code Q67040-S4583 Q67040-S4582 SP000216351 Marking 16N50C3 16N50C3 16N50C3 Maximum Ratings Parameter Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=8, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=16A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and s.


2005-06-07 : DI815C    FT2232L    PCI9052    XL93LC46    F2Dxxx    NE74114    TSC333    CS8954    SSI78A263A    B4207   


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