isc N-Channel MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Sw...
isc N-Channel
MOSFET Transistor
·FEATURES ·Static drain-source on-resistance:
RDS(on) ≤0.29Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·Ideal for high-frequency switching and synchronous rectification
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
800
VGS
Gate-Source
Voltage
±20
ID
Drain Current-Continuous
17
IDM
Drain Current-Single Pulsed
51
PD
Total Dissipation @TC=25℃
42
Tj
Max. Operating Junction Temperature
150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 2.98 62
UNIT ℃/W ℃/W
SPA17N80C3
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isc N-Channel
MOSFET Transistor
SPA17N80C3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
BVDSS Drain-Source Breakdown
Voltage VGS=0V; ID =250μA
VGS(th) Gate Threshold
Voltage
VDS=VGS; ID =1mA
RDS(on) Drain-Source On-Resistance
VGS=10V; ID=11A
MIN TYP MAX UNIT
800
V
2.1
3.9
V
0.29
Ω
IGSS
Gate-Source Leakage Current
VGS= 20V;VDS=0V
VDS=800V; VGS= 0V
IDSS
Drain-Source Leakage Current
VDS=800V; VGS= 0V; Tj= 150℃
VSD
Diode forward
voltage
IS=11A; VGS = 0V
100
nA
25 μA
250
1.2
V
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