isc N-Channel MOSFET Transistor
·FEATURES ·New revolutionary high voltage technology ·Ultra low gate charge ·High peak c...
isc N-Channel
MOSFET Transistor
·FEATURES ·New revolutionary high
voltage technology ·Ultra low gate charge ·High peak current capability ·Improved transconductance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
INCHANGE Semiconductor
SPA20N60C3
·APPLICATIONS ·Switching applications
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source
Voltage
600
VGSS ID IDM
Gate-Source
Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
20.7 13.1
62.1
PD
Total Dissipation
34.5
Tj
Operating Junction Temperature
-55~150
Tstg
Storage Temperature
-55~150
UNIT V V A A W ℃ ℃
·THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
Rth(ch-c) Channel-to-case thermal resistance
Rth(ch-a) Channel-to-ambient thermal resistance
MAX 3.6 62
UNIT ℃/W ℃/W
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isc N-Channel
MOSFET Transistor
INCHANGE Semiconductor
SPA20N60C3
ELECTRICAL CHARACTERISTICS
TC=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
MIN TYP MAX UNIT
BVDSS
Drain-Source Breakdown
Voltage VGS=0V; ID= 0.25mA
600
V
VGS(th)
Gate Threshold
Voltage
VDS=±30V; ID=1mA
3
3.9
V
RDS(on)
Drain-Source On-Resistance
VGS= 10V; ID=13.1A
160 190
mΩ
IGSS IDSS VSDF
Gate-Source Leakage Current Drain-Source Leakage Current Diode forward
voltage
VGS= ±30V;VDS= 0V
VDS= 600V; VGS= 0V；TJ=25℃ TJ=125℃
ISD=20.7A, VGS = 0 V
±0.1 μA
1 100
μA
1.2
...
