Schottky Barrier Diodes (Power Surface Mount)
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
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Schottky Barrier Diodes (Power Surface Mount)
Absolute Maximum Ratings Parameter Type No. VRM (V) I F (AV) (A) IFSM (A)
50Hz Half-cycle Sinewave Single Shot
30V, 40V, 60V
Others Rth ( j-c) Mass Remarks Fig. (°C/ W) (g)
Electrical Characteristics (Ta = 25°C) Tstg (°C) VF (V)
max per element
Tj (°C)
IR (mA) IF (A) VR = VRM
IR (H) (mA) VR=VRM, Ta=100°C
trr
(ns) IF /IRP (mA)
max per element max per element
SPJ-63S SPB-64S SPB-G34S
30
6.0 6.0 3.0 50
0.45 3.0
3.0
30 (Tj = 125°C)
—
—
Center-tap
3.5 0.55 –40 to +150 5.0 15.0 60 6.0 60 100 60 0.6 0.7 5.0 7.5 5.0 5.0 0.75 3.0 50 (Tj = 150°C) 50 — 50 — 100/100 50 50 100/100 40
5.0
0.29
1 Chip
A
SPB-G54S MPE-24H SPB-G56S
2.5 5.0
1.04 Center-tap 0.29
1 Chip
B A
SPJ-63S
I FSM (A)
50
I FMS Rating
I FSM (A)
40
20ms
Peak Forward Surge Current
30
20
10
0
1
5
10
50
Overcurrent Cycles
SPB-64S
Tc—IF(AV) Derating
6.0 VR =40V
VF —IF Characteristics (Typical)
30 10 100
VR —IR Characteristics (Typical)
I FSM (A)
50
I FMS Rating
I FSM (A)
Average Forward Current I F (AV) (A)
Sinewave
5.0
Reverse Current IR (mA)
4.0
1
100ºC 1 60ºC 0.1 27ºC
t /T= 1/ 3
3.0 2.0 1.0 0
Peak Forward Surge Current
t /T = 1/6
Forward Current IF (A)
D.C.
10
Ta = 125ºC
40
20ms
30
t /T = 1/2
0.1 Ta = 125ºC 100ºC 60ºC 27ºC 0 0.2 0.4 0.6 0.8 1.0 1.2
20
0.01
0.01
10
70
80
90
100
110
120
130
0.001
0.001
0
10
20
30
40
50
60
0
1
5
10
50
Case Temperature Tc (°C)
Forward
Voltage VF (V)
Reverse
Voltage
...
View SPB-G34S Datasheet
