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SPB08P06P Datasheet

Part Number SPB08P06P
Manufacturers INCHANGE
Logo INCHANGE
Description P-Channel MOSFET
Datasheet SPB08P06P DatasheetSPB08P06P Datasheet (PDF)

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -8.8 PD Total Dissipation @TC=25℃ 42 T.

  SPB08P06P   SPB08P06P






Part Number SPB08P06P
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description Power-Transistor
Datasheet SPB08P06P DatasheetSPB08P06P Datasheet (PDF)

SIPMOS® Power-Transistor Features • P-Channel • Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Type Package SPB08P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Marking Lead free 08P06P Yes Packing Non dry Maximum ratings, at T j=25 °C, unless otherw.

  SPB08P06P   SPB08P06P







P-Channel MOSFET

isc P-Channel MOSFET Transistor ·FEATURES ·Static drain-source on-resistance: RDS(on)≤300mΩ(@VGS= -10V; ID= -6.2A) ·Advanced trench process technology ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Fast switching application. ·ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE VDSS Drain-Source Voltage -60 VGS Gate-Source Voltage ±20 ID Drain Current-Continuous -8.8 PD Total Dissipation @TC=25℃ 42 Tj Max. Operating Junction Temperature -55~175 Tstg Storage Temperature -55~175 UNIT V V A W ℃ ℃ ·THERMAL CHARACTERISTICS SYMBOL PARAMETER MAX UNIT Rth(j-c) Channel-to-case thermal resistance 3.6 ℃/W SPB08P06P isc website:www.iscsemi.cn 1 isc & iscsemi is registered trademark isc P-Channel MOSFET Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS BVDSS Drain-Source Breakdown Voltage VGS=0V; ID= -250μA VGS(th) Gate Threshold Voltage VDS=VGS; ID= -250μA RDS(on) Drain-Source On-Resistance VGS= -10V; ID= -6.2A IGSS Gate-Source Leakage Current VGS= ±20V; VDS= 0V IDSS Drain-Source Leakage Current VDS= -60V; VGS= 0V VSD Diode forward voltage IS= -8.8A, VGS = 0V SPB08P06P MIN MAX UNIT -60 V -2.1 -4 V 300 mΩ ±100 nA -1 μA -1.55 V NOTICE: ISC reserves the rights to make changes of the content herein the datasheet at any time without notification. The information contained herein is presented onl.


2020-11-27 : SPA11N65C3    SPA12N50C3    SPA16N50C3    SPA08N50C3    SPB04N50C3    SPA21N50C3    AOB2146L    AOT2146L    AOB2906    AOB2904   


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