SPB08P06PG

SIPMOS® Power-Transistor Features P-Channel Enhancement mode Avalanche rated dv /dt rated 175°C operating temperature Pb-free lead finishing; RoHS compliant ° Halogen-free according to IEC61249-2-21 ° Qualified according to AEC Q101 Product Summary V DS R DS(on),max ID SPB08P06P G -60 V 0.3 Ω -8.8 A PG-TO263-3 Type Package SPB08P06PG PG-TO263-3 Tape and reel information 1000 pcs / reel Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current ID I D,pulse T A=25 °C T A=100 °C T A=25 °C Marking Lead free 08P06P Yes Packing Non dry Value steady state -8.8 -6.3 -35.32 Unit A Avalanche energy, single pulse E AS I D=8.83 A, R GS=25 Ω 70 mJ Reverse diode dv /dt Gate source voltage Power dissipation Operating and storage temperature ESD class dv /dt I D=8.83 A, V DS=48 V, di /dt =-200 A/µs, T j,max=175 °C V GS P tot T A=25 °C T j, T stg Soldering temperature IEC climatic category; DIN IEC 68-1 -6 ±20 42 "-55 ... +175" kV/µs V W °C 260 °C 55/150/56 Rev 1.7 page 1 2012-09-07 Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: Symbol Conditions SPB08P06P G min. Values typ. Unit max. R thJC R thJA R thJA minimal footprint 6 cm2 cooling area1) - - 3.6 K/W - 62 - 62 K/W - 40 Electrical characteristics, at T j=25 °C, unless otherwise specified Static characteristics Dra...