SPP100N04S2-04 SPB100N04S2-04 OptiMOS® Power-Transistor
Feature
• N-Channel
Product Summary VDS RDS(on) max. SMD versio...
SPP100N04S2-04 SPB100N04S2-04 OptiMOS® Power-Transistor
Feature
N-Channel
Product Summary VDS RDS(on) max. SMD version ID
P- TO263 -3-2
40 3.3 100
P- TO220 -3-1
V mΩ A
Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated
Type SPP100N04S2-04 SPB100N04S2-04
Package P- TO220 -3-1 P- TO263 -3-2
Ordering Code Q67060-S6040 Q67060-S6041
Marking PN0404 PN0404
Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1)
TC=25°C
Value 100 100
Unit A
ID
Pulsed drain current
TC=25°C
ID puls EAS dv/dt VGS Ptot T j , Tstg
400 810 6 ±20 300 -55... +175 55/175/56 mJ kV/µs V W °C
Avalanche energy, single pulse
ID=80 , VDD=25V, RGS=25Ω
Reverse diode d v/dt
IS=100A, VDS=32V, di/dt=200A/µs, Tjmax=175°C
Gate source
voltage Power dissipation
TC=25°C
Operating and storage temperature IEC climatic category; DIN IEC 68-1
Page 1
2003-05-08
SPP100N04S2-04 SPB100N04S2-04
Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB:
@ min. footprint @ 6 cm2 cooling area
2)
Symbol min. RthJC RthJA RthJA -
Values typ. 0.3 max. 0.5 62 62 40
Unit
K/W
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown
voltage
V GS=0V, ID=1mA
Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 40 2.1
Values typ. 3 max. 4
Unit
V
Gate threshold
voltage, VGS = ...
