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SPB100N06S2L-05 Datasheet

Part Number SPB100N06S2L-05
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS Power-Transistor
Datasheet SPB100N06S2L-05 DatasheetSPB100N06S2L-05 Datasheet (PDF)

SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 55 4.4 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Q67060-S6043 Q67060-S6042 Marking PN06L05 PN06L05 SPP100N06S2L-05 P- TO220 -3-1 SPB100N06S2L-05 P- TO263 -3-2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous.

  SPB100N06S2L-05   SPB100N06S2L-05






Part Number SPB100N06S2L-05
Manufacturers Infineon Technologies
Logo Infineon Technologies
Description OptiMOS Power-Transistor
Datasheet SPB100N06S2L-05 DatasheetSPB100N06S2L-05 Datasheet (PDF)

www.DataSheet4U.com SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 55 4.4 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Q67060-S6043 Q67060-S6042 Marking PN06L05 PN06L05 SPP100N06S2L-05 P- TO220 -3-1 SPB100N06S2L-05 P- TO263 -3-2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parame.

  SPB100N06S2L-05   SPB100N06S2L-05







OptiMOS Power-Transistor

SPP100N06S2L-05 SPB100N06S2L-05 OptiMOS® Power-Transistor Feature • N-Channel Product Summary VDS RDS(on) max. SMD version ID P- TO263 -3-2 55 4.4 100 P- TO220 -3-1 V mΩ A • Enhancement mode • Logic Level • 175°C operating temperature • Avalanche rated • dv/dt rated Type Package Ordering Code Q67060-S6043 Q67060-S6042 Marking PN06L05 PN06L05 SPP100N06S2L-05 P- TO220 -3-1 SPB100N06S2L-05 P- TO263 -3-2 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current 1) TC=25°C Value 100 100 Unit A ID Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 400 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=100A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-09 SPP100N06S2L-05 SPB100N06S2L-05 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IG.


2005-06-07 : DI815C    FT2232L    PCI9052    XL93LC46    F2Dxxx    NE74114    TSC333    CS8954    SSI78A263A    B4207   


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