SPB12N50C3

Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Ultra low gate charge Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance SPB12N50C3 VDS @ Tjmax 560 V RDS(on) 0.38 Ω ID 11.6 A PG-TO263 - Type SPB12N50C3 Package PG-TO263 Ordering Code Q67040-S4641 Marking 12N50C3 Maximum Ratings Parameter Symbol Continuous drain current TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax2) ID=11.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 7) ID ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value SPB 11.6 7 34.8 340 0.6 11.6 ±20 ±30 125 -55...+150 15 Unit A A mJ A V W °C V/ns Rev. 2.4 Page 1 2005-11-07 SPB12N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 11.6 A, Tj = 125 °C Symbol dv/dt Value 50 Unit V/ns Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - case, FullPAK Thermal resistance, junction - ambient, leaded Thermal resistance, junction - ambient, FullPAK SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Soldering temperature, reflow soldering, MSL1 1.6 mm (0.063 in.) from case for 10s 4) Symbol RthJC RthJC_FP...