SPB160N04S2-03

SPB160N04S2-03 OptiMOS® Power-Transistor Feature N-Channel Product Summary VDS R DS(on) ID 40 2.9 160 P- TO263 -7-3 V mΩ A Enhancement mode High Current Rating Low On-Resistance RDS(on) 175°C operating temperature Avalanche rated dv/dt rated Type SPB160N04S2-03 Package P- TO263 -7-3 Ordering Code Q67060-S6123 Marking P2N0403 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Continuous drain current1) TC=25°C Symbol ID Value 160 160 Unit A Pulsed drain current TC=25°C ID puls EAS EAR dv/dt VGS Ptot T j , Tstg 640 810 30 6 ±20 300 -55... +175 55/175/56 kV/µs V W °C mJ Avalanche energy, single pulse ID=80A, V DD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax 2) Reverse diode d v/dt IS=160A, VDS=44V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2003-05-22 SPB160N04S2-03 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) Symbol min. RthJC RthJA RthJA - Values typ. 0.3 max. 0.5 62 62 40 Unit K/W Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage V GS=0V, ID=1mA Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) 40 2.1 Values typ. 3 max. 4 Unit V Gate threshold voltage, VGS = V D...