SPD08N50C3

SPD08N50C3 Cool MOS™ Power Transistor Feature New revolutionary high voltage technology Worldwide best RDS(on) in TO-252 Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.6 Ω ID 7.6 A PG-TO252 Periodic avalanche rated Extreme dv/dt rated Ultra low effective capacitances Improved transconductance , available in Halogen free mold compounda) Fully qualified according to JEDEC for Industrial Applications Type SPD08N50C3 Package PG-TO252 Ordering Code Q67040-S4569 Marking 08N50C3 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID TC = 25 °C TC = 100 °C Pulsed drain current, tp limited by Tjmax Avalanche energy, single pulse ID=5.5A, VDD=50V Avalanche energy, repetitive tAR limited by Tjmax1) ID=7.6A, VDD=50V Avalanche current, repetitive tAR limited by Tjmax Gate source voltage Gate source voltage AC (f >1Hz) Power dissipation, TC = 25°C Operating and storage temperature Reverse diode dv/dt 6) ID puls EAS EAR IAR VGS VGS Ptot Tj , Tstg dv/dt Value 7.6 4.6 22.8 230 0.5 7.6 ±20 ±30 83 -55... +150 15 Unit A mJ A V W °C V/ns a) non-Halogen free (OPN: SPD08N50C3BT), Halogen free (OPN: SPD08N50C3AT) Rev. 2.7 Page 1 2020-05-15 SPD08N50C3 Maximum Ratings Parameter Drain Source voltage slope VDS = 400 V, ID = 7.6 A, Tj = 125 °C Thermal Characteristics Parameter Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ ...