SPD30N03S2L-10G

OptiMOS® Power-Transistor Feature N-Channel Enhancement mode Logic Level Low On-Resistance RDS(on) Excellent Gate Charge x RDS(on) product (FOM) Superior thermal resistance 175°C operating temperature Avalanche rated dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package SPD30N03S2L-10G PG-TO252-3 Marking 2N03L10 Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current1) TC=25°C ID Pulsed drain current TC=25°C Avalanche energy, single pulse ID=30 A , VDD=25V, RGS=25Ω Repetitive avalanche energy, limited by Tjmax2) Reverse diode dv/dt IS=30A, VDS=24V, di/dt=200A/µs, Tjmax=175°C Gate source voltage Power dissipation TC=25°C Operating and storage temperature IEC climatic category; DIN IEC 68-1 ID puls EAS EAR dv/dt VGS Ptot Tj , Tstg SPD30N03S2L-10 G Product Summary VDS 30 V RDS(on) 10 mΩ ID 30 A PG-TO252-3 Value 30 30 120 150 10 6 ±20 100 -55... +175 55/175/56 Unit A mJ kV/µs V W °C Page 1 02-09-2008 Thermal Characteristics Parameter Characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient, leaded SMD version, device on PCB: @ min. footprint @ 6 cm2 cooling area 3) SPD30N03S2L-10 G Symbol Values Unit min. typ. max. RthJC RthJA RthJA - 1 1.5 K/W - - 100 - - 75 - - 50 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. Static Characteristics Drain-source breakdown voltage V(BR)...