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SPI12N50C3 MOSFET Datasheet PDF

N-Channel MOSFET

N-Channel MOSFET

 

 

 

Part Number SPI12N50C3
Description N-Channel MOSFET
Feature isc N-Channel MOSFET Transistor ·FEATU RES ·Static drain-source on-resistance : RDS(on) ≤0.
38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanch e tested ·Minimum Lot-to-Lot variation s for robust device performance and rel iable operation ·DESCRITION ·New revo lutionary high voltage technology ·Ult ra low effective capacitance ·ABSOLUT E MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VALUE VDSS Drain-Source Volt age 500 VGS Gate-Source Voltage ±2 0 ID Drain Current-Continuous 11.
6 IDM Drain Current-Single Pulsed 34.
8 PD Total Dissipation @TC=25℃ 125 Tj Max.
Operating Junction Tempe .
Manufacture INCHANGE
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Part Number SPI12N50C3
Description Power Transistor
Feature SPP12N50C3 SPI12N50C3, SPA12N50C3 Cool MOS™ Power Transistor Feature
• New revolutionary high voltage technology
• Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0.
38 Ω ID 11.
6 A Periodic avalanche rated PG-TO220-F 3P-31 PG-TO262- PG-TO220
• Extreme d v/dt rated 2
• Ultra low effective capacitances
• Improved transconducta nce 1 23 P-TO220-3-31 P-TO220-3-1 23 1
• PG-TO-220-3-31;-3-111: Fully is olated package (2500 VAC; 1 minute) Ty pe SPP12N50C3 Package PG-TO220 Orderi ng Code Q67040-S4579 Marking 12N50C3 SPI12N50C3 SPA12N50C3 PG-TO262 Q67040- S4578 PG-TO220FP SP000216322 12 .
Manufacture Infineon Technologies
Datasheet
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