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SPI12N50C3 MOSFET Datasheet PDFN-Channel MOSFET N-Channel MOSFET |
 
 
 
Part Number | SPI12N50C3 |
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Description | N-Channel MOSFET |
Feature | isc N-Channel MOSFET Transistor
·FEATU RES ·Static drain-source on-resistance :
RDS(on) ≤0. 38Ω ·Enhancement mode ·Fast Switching Speed ·100% avalanch e tested ·Minimum Lot-to-Lot variation s for robust device performance and rel iable operation ·DESCRITION ·New revo lutionary high voltage technology ·Ult ra low effective capacitance ·ABSOLUT E MAXIMUM RATINGS(Ta=25℃) SYMBOL PA RAMETER VALUE VDSS Drain-Source Volt age 500 VGS Gate-Source Voltage ±2 0 ID Drain Current-Continuous 11. 6 IDM Drain Current-Single Pulsed 34. 8 PD Total Dissipation @TC=25℃ 125 Tj Max. Operating Junction Tempe . |
Manufacture | INCHANGE |
Datasheet |
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Part Number | SPI12N50C3 |
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Description | Power Transistor |
Feature | SPP12N50C3 SPI12N50C3, SPA12N50C3
Cool MOSâ„¢ Power Transistor
Feature • New revolutionary high voltage technology • Ultra low gate charge VDS @ Tjmax 560 V RDS(on) 0. 38 Ω ID 11. 6 A â €¢ Periodic avalanche rated PG-TO220-F 3P-31 PG-TO262- PG-TO220 • Extreme d v/dt rated 2 • Ultra low effective capacitances • Improved transconducta nce 1 23 P-TO220-3-31 P-TO220-3-1 23 1 • PG-TO-220-3-31;-3-111: Fully is olated package (2500 VAC; 1 minute) Ty pe SPP12N50C3 Package PG-TO220 Orderi ng Code Q67040-S4579 Marking 12N50C3 SPI12N50C3 SPA12N50C3 PG-TO262 Q67040- S4578 PG-TO220FP SP000216322 12 . |
Manufacture | Infineon Technologies |
Datasheet |
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